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| MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES * Class A operation * High output power P1dB=41dBm(TYP) * High power gain GLP=11dB(TYP) * High power added efficiency add=40%(TYP) @2.3GHz,P1dB * Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE * IG 10.0 RECOMMENDED BIAS CONDITIONS * VDS=10V * ID=2.6A * Rg=50 * Refer to Bias Procedure 1 GATE 2 SOURCE(FLANGE) GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 10 30 63 37.5 175 -65 to +175 *1 Unit V V A mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol IDSS gm VGS(off) P1dB GLP add Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression VDS=3V,VGS=0V VDS=3V,ID=2.6A VDS=3V,ID=20mA Test conditions Min - - -2 40 VDS=10V,ID 2.6A,f=2.3GHz 10 - - Limits Typ - 3.0 - 41 11 40 - Max 10 - -5 - - - 4.0 Unit A S V dBm dB % C/W Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 Vf method *1:Channel to case *2:Pin=25dBm Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS ID vs. VGS 12 VDS=3V Ta=25C 12 VGS=-0.5V/Step Ta=25C VGS=0V 8 8 ID vs. VDS 4 4 0 -3 -2 -1 0 0 0 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & add vs. Pin (f=2.3GHz) 45 VDS=10V ID=2.6A Gp=11 10 9 dB 13 12 11 PO 10 41 35 39 30 add 25 0 20 25 30 35 50 40 30 20 10 0 37 40 20 GLP,P1dB, ID and add vs. VDS (f=2.3GHz) ID=2.6A GLP 40 P1dB add 6 8 10 INPUT POWER Pin(dBm) VDS(V) Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET S11 ,S22 vs. f. +j50 +j25 +j100 S21 ,S12 vs. f. +90 3.0GHz +j10 3.0GHz 3.0GHz S22 0.5GHz 25 50 100 250 +j250 S21 5 4 3 2 0.5GHz 1 0 3.0GHz S12 0 S11 180 0 0.5GHz I S21 I 0.5GHz -j10 -j250 0.1 -j25 -j50 -j100 Ta=25C VDS=10V ID=2.6A 0.2 -90 S PARAMETERS (Ta=25C,VDS=10V,ID=2.6A) Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 Magn. 0.986 0.985 0.984 0.983 0.982 0.981 0.980 0.979 0.978 0.976 0.975 0.974 0.973 0.972 0.971 0.970 0.969 0.968 0.967 0.966 0.965 0.965 0.964 0.963 0.962 0.961 S11 Angle(deg.) -167.3 -171.3 -174.3 -175.5 -172.1 -173.9 -175.3 -176.3 -176.9 -177.9 -178.2 -179.3 -179.8 179.5 178.6 176.7 175.9 175.1 174.1 173.1 172.3 171.2 170.2 168.7 167.6 166.3 Magn. 2.046 1.833 1.515 1.356 1.233 1.128 1.033 0.970 0.919 0.878 0.845 0.811 0.788 0.771 0.754 0.653 0.638 0.638 0.635 0.625 0.628 0.634 0.635 0.646 0.642 0.651 S21 Angle(deg.) 91.2 87.9 86.1 83.6 84.0 81.1 79.7 77.8 75.8 73.6 71.6 69.4 67.8 65.8 64.1 63.1 60.9 59.0 56.3 54.2 52.3 51.3 48.9 46.3 44.0 41.0 Magn. 0.008 0.010 0.011 0.012 0.013 0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.020 0.022 0.023 0.023 0.023 0.024 0.025 0.025 0.027 0.027 0.028 0.029 0.029 S12 Angle(deg.) 44.1 44.2 44.6 44.9 45.3 45.8 46.4 46.8 47.0 47.3 47.6 48.0 48.4 48.9 49.2 49.6 49.9 50.4 50.7 51.0 51.2 51.6 51.9 52.3 52.5 52.7 Magn. 0.913 0.911 0.909 0.907 0.904 0.902 0.898 0.895 0.889 0.883 0.875 0.865 0.858 0.850 0.843 0.837 0.833 0.829 0.826 0.823 0.820 0.818 0.816 0.814 0.812 0.811 S22 Angle(deg.) -178.6 -179.9 178.6 178.2 177.7 176.6 175.7 176.6 176.0 175.6 175.2 175.0 174.6 173.6 173.4 172.6 174.1 173.6 172.9 171.0 170.3 168.8 167.1 165.7 164.6 162.7 K 0.515 0.567 0.583 0.675 0.683 0.713 0.736 0.785 0.815 0.835 0.900 0.951 0.989 1.011 1.050 1.149 1.170 1.221 1.242 1.256 1.267 1.292 1.315 1.327 1.366 1.412 MSG/MAG (dB) 23.1 22.7 21.8 21.2 20.3 19.6 19.3 18.7 18.2 17.5 17.1 16.8 15.8 14.7 14.1 13.9 13.7 12.7 12.3 11.9 11.6 11.4 11.0 10.1 9.8 9.4 Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR MGF0911A L, S BAND POWER GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will b occasions when our semiconductor products suffer breakdowns, malfunctions or other e problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. Mitsubishi Electric June/2004 |
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